AlGaN Alloys for Next Generation Power Electronics
Dr. Andrew Allerman (Sandia National Laboratory, USA)
Andrew Allerman is a Distinguished Member of Technical Staff in the Advanced Electronic and Optoelectronic Materials Department at Sandia National Laboratories in Albuquerque, NM. Throughout his career, he has specialized in the development of MOCVD processes for a wide range of compound semiconductor materials and device technologies. His work on AlGaN alloys has spanned more than 20 years developing UV laser diodes and LEDs, UV-sensitive photodetectors, intersubband, electro-absorptive modulators at 1550 nm, and more recently Al-rich AlGaN-channel HEMTs and power diodes along with high temperature MOCVD growth processes for h-BN. His prior work includes MOCVD growth of As-P-Sb and dilute nitride III-V compound semiconductors for mid-IR laser diodes and LEDs, near-IR VCSELs, HBTs, HFETs, HEMTs, solar cells (1 eV) and photonic integrated circuits. Andy is a member of several international advisory boards for III-Nitride semiconductor conferences and has been program co-chairs of numerous conferences. He received his B.S. and Ph. D degrees in Physics from Auburn University.
2D materials for UV application
Prof. Jeehwan Kim (MIT, USA)
Perspectives of AlGaN-based DUV LEDs and their applications
Prof. Michael Kneissl (Technical University of Berlin, Germany)
CW operation of UVC lasers
Dr. Maki Kushimoto (Nagoya University, Japan)
Maki Kushimoto is a Lecturer in the Department of Electronics at Nagoya University, Japan. She received M.S. and Ph.D. degrees in Electronic Engineering from Nagoya University in 2013 and 2016, respectively. Her research interests are in crystal growth of nitride semiconductors, optical characterization, and de- velopment of devices. In recent years, she has been focusing on the development of deep UV light emitting devices.
Sputtering growth of AlN for high quality template and its application for UV LEDs
Prof. Hideto Miyake (Mie University, Japan)
Hideto Miyake received his MS degree in 1988 from Osaka University. Since 1988, he works at Mie University, and is currently a professor. He received his Dr. of Eng. Degree in 1994 from Osaka University. His research has focused on epitaxial growth and optical-device applications of AlGaN-based nitrides semiconductors. He is a member of the Japan Society of Applied Physics. JSAP Fellow (2020).
UV-C LEDs – from development to todays and future applications
Dr. Martin Strassburg (ams-OSRAM International GmbH, Germany)
Dr. Martin Strassburg has more than 25 years of experience in academic and industrial research and development of opto-electronic materials and devices. He holds numerous patent families in this field (more than 180), has co-authored more than 190 publications on materials development for optoelectronic applications and has given more than 25 invited talks at international conferences, symposia, and workshops. As a member of the Photonics 21 Board of Stakeholders, he contributes to the European research agenda. At ams-OSRAM, he is responsible for innovation and technology collaborations with commercial and university partners.